Last month, the Black Shark 3 and Black Shark 3 Pro were released, becoming the world’s first 5G gaming phones. Careful users may have noticed that the Black Shark 3 is clearly equipped with a Samsung AMOLED screen, while the Black Shark 3 Pro does not name the supplier. According to Korean media reports, the Black Shark 3 Pro uses a 2.5D OLED flexible screen provided by BOE. Acc...
Mouser Electronics, Inc. is now stocking the QPD0011 high-electron-mobility Transistor (HEMT) from Qorvo. The gallium nitride-on-silicon carbide (GaN-on-SiC) Transistor delivers power and performance for cellular base station and RF applications in 5G massive MIMO, LTE, and WCDMA systems.
The Qorvo QPD0011, available from Mouser Electronics, is an asymmetric, dual-path amplifier in a small, 7.0 mm × 6.5 mm DFN package. Utilizing variable power inputs from 30 W to 60 W and drain voltages of +48 V, the QPD0011 operates between 3.3 GHz and 3.6 GHz and features up to 13.3 dB of gain, for ultra-efficient signal, peak, and power performance (up to 90 W) in Doherty design environments.
For development, Mouser also stocks the QPD0011EVB1 Evaluation Board. The QPD0011EVB1 platform includes an example application Circuit, allowing rapid prototyping when incorporated into existing designs. Applications for the QPD0011 include macrocell and microcell base stations, active antennas, and asymmetric Doherty designs.
For more information, visit www.mouser.com
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