Recently, the main structure of the sputtering workshop of the first section of Hunan Sanan semiconductor Project (Phase I) has been capped. This is another important moment for the construction of the project after the successful completion of the main structure capping of the M3 device packaging plant and the M4 silicon carbide growth plant.
According to reports, the sputtering plant is located in the southeast corner of the project, covering an area of 5,500 square meters and a total construction area of about 6,000 square meters. The single building was excavated on October 5th, the positive and negative zero structure construction was completed on December 2nd, and the last piece of roof pouring was completed on December 25th.
The M4 silicon carbide crystal growth plant covers an area of 8,000 square meters and a building area of 12,000 square meters. It is the fourth largest building area among all the monomers. The building structure is a reinforced concrete structure. The unit officially broke ground on September 3, and successfully completed the capping of the main structure on December 24. The structure capping of the M4 silicon carbide growth plant has opened up an important part of the overall capping of the entire industrial chain of the Hunan Sanan Semiconductor Project.
The M3 device packaging plant covers an area of 11,000 square meters and a building area of 33,000 square meters. It is the single unit with the highest building and the largest number of structural layers in the entire project. Since the start of construction on September 1, the construction of the roof was completed on December 20, 7 days earlier than the original plan.
It is understood that the structural capping of these three individual buildings marks the end of the main construction of the second phase of the entire project. The subsequent wastewater station, M1A crystal growth, and M2B chip plant will be capped in mid and late January 2021. , the entire industry chain of the semiconductor project will be fully opened.